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au.\*:("BUEHLER, MARTIN")

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Experimental characterization and quadratic programming-based control of brushless-motorsAGHILI, Farhad; BUEHLER, Martin; HOLLERBACH, John M et al.IEEE transactions on control systems technology. 2003, Vol 11, Num 1, pp 139-146, issn 1063-6536, 8 p.Article

Simulation of an underwater hexapod robotGEORGIADES, Christina; NAHON, Meyer; BUEHLER, Martin et al.Ocean engineering. 2009, Vol 36, Num 1, pp 39-47, issn 0029-8018, 9 p.Article

Design considerations for a radiation hardened nonvolatile memoryMURRAY, J. R.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1610-1618, issn 0018-9499Conference Paper

One hundred percent abrupt failure between two radiation levels in step-stress testing of electronic partsNAMENSON, A; MYERS, D.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1709-1713, issn 0018-9499Conference Paper

Determination of funnel length from cross section versus LET measurementsGOLKE, K. W.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1910-1917, issn 0018-9499Conference Paper

5.5-MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broad-band LEDEVANS, B. D; HAGER, H. E; HUGHLOCK, B. W et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1645-1654, issn 0018-9499Conference Paper

Altitude and latitude variations in avionics SEU and atmospheric neutron fluxNORMAND, E; BAKER, T. J.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1484-1490, issn 0018-9499Conference Paper

Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated processDELAUS, M; EMILY, D; MAPPES, B et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1774-1779, issn 0018-9499Conference Paper

Geometrical factors in SEE rate calculationsPETERSEN, E. L; PICKEL, J. C; SMITH, E. C et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1888-1909, issn 0018-9499Conference Paper

Monitoring SEU parameters at reduced biasROTH, D. R; MCNULTY, P. J; ABDEL-KADER, W. G et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1721-1724, issn 0018-9499Conference Paper

Radiation-induced charge effects in buried oxides with different processing treatmentsPENNISE, C. A; BOESCH, H. E; GOETZ, G et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1765-1773, issn 0018-9499Conference Paper

Results from the high efficiency solar panel experiment flown on CRRESRAY, K. P; MULLEN, E. G; TRUMBLE, T. M et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1505-1511, issn 0018-9499Conference Paper

Singel-word multiple-bit upsets in static random access devicesKOGA, R; PINKERTON, S. D; LIE, T. J et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1941-1946, issn 0018-9499Conference Paper

Single event induced charge transport modeling of GaAs MESFETsWEATHERFORD, T. R; MCMORROW, D; CURTICE, W. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1867-1871, issn 0018-9499Conference Paper

The low earth orbit radiation environment & its evolution from measurements using the CREAM & CREDO experimentsDYER, C. S; SIMS, A. J; TRUSCOTT, P. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1471-1478, issn 0018-9499Conference Paper

Behavior of a relativistic electron beam in a gas-filled drift tube as a function of gas pressureMERKEL, G; LITZ, M; ROBERTS, H et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1434-1441, issn 0018-9499Conference Paper

Efficient β/γ Monte Carlo transport in repetitive structuresHALBLEIB, J. A; SCRIVNER, G. J.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1402-1408, issn 0018-9499Conference Paper

Low temperature proton irradiation of GaAs MESFETsSHAW, G. J; XAPSOS, M. A; WEAVER, B. D et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1300-1306, issn 0018-9499Conference Paper

Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devicesCONLEY, J. F; LENAHAN, P. M.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1335-1340, issn 0018-9499Conference Paper

Numerical analysis of single event burnout of power MOSFETsKUBOYAMA, S; MATSUDA, S; NAKAJIMA, M et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1872-1879, issn 0018-9499Conference Paper

On-chip p-MOSFET dosimetryBUEHLER, M. G; BLAES, B. R; SOLI, G. A et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1442-1449, issn 0018-9499Conference Paper

One gigarad passivating nitrided oxides for 100 % internal quantum efficiency silicon photodiodesKORDE, R; CABLE, J. S; CANFIELD, L. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1655-1659, issn 0018-9499Conference Paper

Practical approach to determining charge collected in multi-junction structures due to the ion shunt effectBROWN, A. O; BHARAT BHUVA; KERNS, S. E et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1918-1925, issn 0018-9499Conference Paper

Quality control and monitoring of radiation damage in charge coupled devices at the Stanford linear colliderROBBINS, M. S; ROY, T; HEDGES, S. J et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1561-1566, issn 0018-9499Conference Paper

Radiation response of silicon on diamond (SOD) devicesANNAMALAI, N. K; SAWYER, J; PRAMOD KARULKAR et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1780-1786, issn 0018-9499Conference Paper

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